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Because the trade moves in direction of sub-20 nm nodes, traditional planar NAND flash gadgets are approaching scaling limitations. At these smaller machine geometries, the close packing of reminiscence cells ends in a big improve in parasitic inter-wire capacitance that in turn leads to elevated cross speak and power consumption. Additionally, the closer proximity of adjoining reminiscence cells causes shifts within the threshold worth of a reminiscence cell whereas an adjoining cell is being programmed, resulting in reminiscence disturbance. Lastly, at sub-20 nm dimensions the number of electrons in the floating gate of a conventional planar NAND flash … Read More